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| savantic semiconductor product specification silicon pnp power transistors BD318 d escription with to-3 package high dc current gain excellent safe operating area complement to type bd317 applications designed for high power amplifiers pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -16 a i cm collector current(peak) -20 a i b base current -5 a p t total power dissipation t c =25 200 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 0.875 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors BD318 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-8a ;i b =-0.8a -1.0 v v besat base-emitter saturation voltage i c =-8a ;i b =-0.8a -1.8 v v be( on ) base-emitter on voltage i c =-8a ;v ce =-2.0v -1.5 v i cbo collector cut-off current v cb =100v;i e =0 -1.0 ma i ebo emitter cut-off current v eb =-7v; i c =0 -1.0 ma h fe-1 dc current gain i c =-5a ; v ce =-4v 25 h fe-2 dc current gain i c =-10a ; v ce =-4v 15 f t transition frequency i c =-1a ; v ce =-20v,f=0.2mhz 1 mhz savantic semiconductor product specification 3 silicon pnp power transistors BD318 package outline fig.2 outline dimensions |
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